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Total: 2 records, 1 pages
Search For: As Type Infrared Detector Array
Global As Type Infrared Detector Array Market 2024 by Manufacturers, Regions, Type and Application, Forecast to 2030
29 Sep 2024
Consumer Goods
As Type Infrared Detector Array
As Type Infrared Detector Array is a type of high-performance infrared detection equipment based on arsenic (As) and its compound materials (such as gallium arsenide GaAs, indium gallium arsenide InGaAs, etc.). Arsenic materials, such as gallium arsenide (GaAs) and indium gallium arsenide (InGaAs), have unique electronic band structures and optoelectronic properties, and are suitable for detection within the infrared spectrum. These materials usually have a wide band gap energy, which can effectively absorb light energy in the infrared band and convert it into electrical signals. The working principle of arsenic infrared detector arrays is based on the photoelectric effect. When infrared radiation irradiates the detector surface, photons are absorbed by the material and excited to produce electron-hole pairs. These electrons and holes are separated and collected on the corresponding electrodes under the action of the internal electric field, thereby forming an electrical signal output. Through array design, multi-channel simultaneous detection can be achieved, improving detection efficiency and accuracy.
USD3480.00
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Global As Type Infrared Detector Array Supply, Demand and Key Producers, 2024-2030
29 Sep 2024
Consumer Goods
As Type Infrared Detector Array
As Type Infrared Detector Array is a type of high-performance infrared detection equipment based on arsenic (As) and its compound materials (such as gallium arsenide GaAs, indium gallium arsenide InGaAs, etc.). Arsenic materials, such as gallium arsenide (GaAs) and indium gallium arsenide (InGaAs), have unique electronic band structures and optoelectronic properties, and are suitable for detection within the infrared spectrum. These materials usually have a wide band gap energy, which can effectively absorb light energy in the infrared band and convert it into electrical signals. The working principle of arsenic infrared detector arrays is based on the photoelectric effect. When infrared radiation irradiates the detector surface, photons are absorbed by the material and excited to produce electron-hole pairs. These electrons and holes are separated and collected on the corresponding electrodes under the action of the internal electric field, thereby forming an electrical signal output. Through array design, multi-channel simultaneous detection can be achieved, improving detection efficiency and accuracy.
USD4480.00
Add To Cart
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Search For: As Type Infrared Detector Array
Total: 2 records, 1 pages
As Type Infrared Detector Array is a type of high-performance infrared detection equipment based on arsenic (As) and its compound materials (such as gallium arsenide GaAs, indium gallium arsenide InGaAs, etc.). Arsenic materials, such as gallium arsenide (GaAs) and indium gallium arsenide (InGaAs), have unique electronic band structures and optoelectronic properties, and are suitable for detection within the infrared spectrum. These materials usually have a wide band gap energy, which can effectively absorb light energy in the infrared band and convert it into electrical signals. The working principle of arsenic infrared detector arrays is based on the photoelectric effect. When infrared radiation irradiates the detector surface, photons are absorbed by the material and excited to produce electron-hole pairs. These electrons and holes are separated and collected on the corresponding electrodes under the action of the internal electric field, thereby forming an electrical signal output. Through array design, multi-channel simultaneous detection can be achieved, improving detection efficiency and accuracy.
USD3480.00
Add To Cart
As Type Infrared Detector Array is a type of high-performance infrared detection equipment based on arsenic (As) and its compound materials (such as gallium arsenide GaAs, indium gallium arsenide InGaAs, etc.). Arsenic materials, such as gallium arsenide (GaAs) and indium gallium arsenide (InGaAs), have unique electronic band structures and optoelectronic properties, and are suitable for detection within the infrared spectrum. These materials usually have a wide band gap energy, which can effectively absorb light energy in the infrared band and convert it into electrical signals. The working principle of arsenic infrared detector arrays is based on the photoelectric effect. When infrared radiation irradiates the detector surface, photons are absorbed by the material and excited to produce electron-hole pairs. These electrons and holes are separated and collected on the corresponding electrodes under the action of the internal electric field, thereby forming an electrical signal output. Through array design, multi-channel simultaneous detection can be achieved, improving detection efficiency and accuracy.
USD4480.00
Add To Cart
Popular Product Keywords
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-
Analyze market development needs
-
Prospects for future development
-
Develop industry investment strategy
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