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Total: 3 records, 1 pages
Search For: HgCdTe Infrared Detector
Global HgCdTe Infrared Detector Market 2024 by Manufacturers, Regions, Type and Application, Forecast to 2030
03 Jan 2024
Electronics & Semiconductor
According to our (Global Info Research) latest study, the global HgCdTe Infrared Detector market size was valued at USD million in 2023 and is forecast to a readjusted size of USD million by 2030 with a CAGR of % during review period.
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Global HgCdTe Infrared Detector Supply, Demand and Key Producers, 2023-2029
23 Jan 2023
Electronics & Semiconductor
The global HgCdTe Infrared Detector market size is expected to reach $ million by 2029, rising at a market growth of % CAGR during the forecast period (2023-2029).
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Global HgCdTe Infrared Detector Market 2023 by Manufacturers, Regions, Type and Application, Forecast to 2029
10 Jan 2023
Electronics & Semiconductor
Hg1 xcdxte (Hg1 xcdxte) is a kind of semiconductor material with adjustable band gap. By adjusting the composition of CD, the wavelength can completely cover the whole infrared band, such as short wave, medium wave, long wave and very long wave. The electronic transition of HgCdTe infrared detector by absorbing foreign photons is inter band transition. The material has large light absorption and high quantum efficiency, up to 70% ～ 80%. The device has large light response and high response rate. In addition, HgCdTe has the advantages of small electron effective mass, high mobility, fast response and can be used as high-frequency devices, which makes it one of the most important infrared detector materials
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Search For: HgCdTe Infrared Detector
Total: 3 records, 1 pages
According to our (Global Info Research) latest study, the global HgCdTe Infrared Detector market size was valued at USD million in 2023 and is forecast to a readjusted size of USD million by 2030 with a CAGR of % during review period.
USD3480.00
Add To Cart
The global HgCdTe Infrared Detector market size is expected to reach $ million by 2029, rising at a market growth of % CAGR during the forecast period (2023-2029).
USD4480.00
Add To Cart
Hg1 xcdxte (Hg1 xcdxte) is a kind of semiconductor material with adjustable band gap. By adjusting the composition of CD, the wavelength can completely cover the whole infrared band, such as short wave, medium wave, long wave and very long wave. The electronic transition of HgCdTe infrared detector by absorbing foreign photons is inter band transition. The material has large light absorption and high quantum efficiency, up to 70% ～ 80%. The device has large light response and high response rate. In addition, HgCdTe has the advantages of small electron effective mass, high mobility, fast response and can be used as high-frequency devices, which makes it one of the most important infrared detector materials
USD3480.00
Add To Cart
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Prospects for future development
-
Develop industry investment strategy
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