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Global InGaAs Infrared Detector Array Market 2024 by Manufacturers, Regions, Type and Application, Forecast to 2030

date 29 Sep 2024

date Consumer Goods

new_biaoQian InGaAs Infrared Detector Array

Indium gallium arsenide (InGaAs) is a semiconductor material composed of indium (In), gallium (Ga) and arsenic (As). Its band gap energy is approximately between 0.7 and 1.7 eV, which is particularly suitable for detection in the near-infrared (NIR) range. This material has a wide band gap, can effectively absorb light energy in the visible and near-infrared ranges, and achieve efficient photoelectric conversion.

USD3480.00

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Global InGaAs Infrared Detector Array Supply, Demand and Key Producers, 2024-2030

date 29 Sep 2024

date Consumer Goods

new_biaoQian InGaAs Infrared Detector Array

Indium gallium arsenide (InGaAs) is a semiconductor material composed of indium (In), gallium (Ga) and arsenic (As). Its band gap energy is approximately between 0.7 and 1.7 eV, which is particularly suitable for detection in the near-infrared (NIR) range. This material has a wide band gap, can effectively absorb light energy in the visible and near-infrared ranges, and achieve efficient photoelectric conversion.

USD4480.00

Add To Cart

Add To Cart

industry 29 Sep 2024

industry Consumer Goods

new_biaoQian InGaAs Infrared Detector Array

Indium gallium arsenide (InGaAs) is a semiconductor material composed of indium (In), gallium (Ga) and arsenic (As). Its band gap energy is approximately between 0.7 and 1.7 eV, which is particularly suitable for detection in the near-infrared (NIR) range. This material has a wide band gap, can effectively absorb light energy in the visible and near-infrared ranges, and achieve efficient photoelectric conversion.

USD3480.00

addToCart

Add To Cart

industry 29 Sep 2024

industry Consumer Goods

new_biaoQian InGaAs Infrared Detector Array

Indium gallium arsenide (InGaAs) is a semiconductor material composed of indium (In), gallium (Ga) and arsenic (As). Its band gap energy is approximately between 0.7 and 1.7 eV, which is particularly suitable for detection in the near-infrared (NIR) range. This material has a wide band gap, can effectively absorb light energy in the visible and near-infrared ranges, and achieve efficient photoelectric conversion.

USD4480.00

addToCart

Add To Cart