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Global Metal Organic Chemical Vapor Deposition (MOCVD) Equipment Market 2024 by Manufacturers, Regions, Type and Application, Forecast to 2030

date 22 Jan 2024

date Machinery & Equipment

new_biaoQian Metal Organic Chemical Vapor Deposition (MOCVD) Equipment

According to our (Global Info Research) latest study, the global Metal Organic Chemical Vapor Deposition (MOCVD) Equipment market size was valued at USD 1001.2 million in 2023 and is forecast to a readjusted size of USD 1489.3 million by 2030 with a CAGR of 5.8% during review period.

USD3480.00

Add To Cart

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Global Metal Organic Chemical Vapor Deposition (MOCVD) Equipment Supply, Demand and Key Producers, 2023-2029

date 13 Feb 2023

date Machinery & Equipment

new_biaoQian Metal Organic Chemical Vapor Deposition (MOCVD) Equipment

Metalorganic vapour-phase epitaxy (MOVPE), also known as organometallic vapour-phase epitaxy (OMVPE) or metalorganic chemical vapour deposition (MOCVD), is a chemical vapour deposition method used to produce single- or polycrystalline thin films. It is a highly complex process for growing crystalline layers to create complex semiconductor multilayer structures. In contrast to molecular-beam epitaxy (MBE), the growth of crystals is by chemical reaction and not physical deposition. This takes place not in vacuum, but from the gas phase at moderate pressures (10 to 760 Torr). As such, this technique is preferred for the formation of devices incorporating thermodynamically metastable alloys, and it has become a major process in the manufacture of optoelectronics.

USD4480.00

Add To Cart

Add To Cart

Global Metal Organic Chemical Vapor Deposition (MOCVD) Equipment Market 2023 by Manufacturers, Regions, Type and Application, Forecast to 2029

date 17 Jan 2023

date Machinery & Equipment

new_biaoQian Metal Organic Chemical Vapor Deposition (MOCVD) Equipment

Metalorganic vapour-phase epitaxy (MOVPE), also known as organometallic vapour-phase epitaxy (OMVPE) or metalorganic chemical vapour deposition (MOCVD), is a chemical vapour deposition method used to produce single- or polycrystalline thin films. It is a highly complex process for growing crystalline layers to create complex semiconductor multilayer structures. In contrast to molecular-beam epitaxy (MBE), the growth of crystals is by chemical reaction and not physical deposition. This takes place not in vacuum, but from the gas phase at moderate pressures (10 to 760 Torr). As such, this technique is preferred for the formation of devices incorporating thermodynamically metastable alloys, and it has become a major process in the manufacture of optoelectronics.

USD3480.00

Add To Cart

Add To Cart

According to our (Global Info Research) latest study, the global Metal Organic Chemical Vapor Deposition (MOCVD) Equipment market size was valued at USD 1001.2 million in 2023 and is forecast to a readjusted size of USD 1489.3 million by 2030 with a CAGR of 5.8% during review period.

USD3480.00

addToCart

Add To Cart

Metalorganic vapour-phase epitaxy (MOVPE), also known as organometallic vapour-phase epitaxy (OMVPE) or metalorganic chemical vapour deposition (MOCVD), is a chemical vapour deposition method used to produce single- or polycrystalline thin films. It is a highly complex process for growing crystalline layers to create complex semiconductor multilayer structures. In contrast to molecular-beam epitaxy (MBE), the growth of crystals is by chemical reaction and not physical deposition. This takes place not in vacuum, but from the gas phase at moderate pressures (10 to 760 Torr). As such, this technique is preferred for the formation of devices incorporating thermodynamically metastable alloys, and it has become a major process in the manufacture of optoelectronics.

USD4480.00

addToCart

Add To Cart

Metalorganic vapour-phase epitaxy (MOVPE), also known as organometallic vapour-phase epitaxy (OMVPE) or metalorganic chemical vapour deposition (MOCVD), is a chemical vapour deposition method used to produce single- or polycrystalline thin films. It is a highly complex process for growing crystalline layers to create complex semiconductor multilayer structures. In contrast to molecular-beam epitaxy (MBE), the growth of crystals is by chemical reaction and not physical deposition. This takes place not in vacuum, but from the gas phase at moderate pressures (10 to 760 Torr). As such, this technique is preferred for the formation of devices incorporating thermodynamically metastable alloys, and it has become a major process in the manufacture of optoelectronics.

USD3480.00

addToCart

Add To Cart