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Total: 59 records, 6 pages

HuiJianTou lanJianTou

Global Rectifier Diode Supply, Demand and Key Producers, 2024-2030

date 20 Feb 2024

date Electronics & Semiconductor

new_biaoQian Rectifier Diode

The global Rectifier Diode market size is expected to reach $ 5080 million by 2030, rising at a market growth of 2.4% CAGR during the forecast period (2024-2030).

USD4480.00

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Global Rectifier Diode Market 2024 by Manufacturers, Regions, Type and Application, Forecast to 2030

date 02 Jan 2024

date Electronics & Semiconductor

new_biaoQian Rectifier Diode

According to our (Global Info Research) latest study, the global Rectifier Diode market size was valued at USD 4305.1 million in 2023 and is forecast to a readjusted size of USD 5080 million by 2030 with a CAGR of 2.4% during review period.

USD3480.00

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Global Si Rectifier Diode Supply, Demand and Key Producers, 2024-2030

date 11 Feb 2024

date Electronics & Semiconductor

new_biaoQian Si Rectifier Diode

The global Si Rectifier Diode market size is expected to reach $ 5287.4 million by 2030, rising at a market growth of 3.7% CAGR during the forecast period (2024-2030).

USD4480.00

Add To Cart

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Global Si Rectifier Diode Market 2024 by Manufacturers, Regions, Type and Application, Forecast to 2030

date 11 Jan 2024

date Electronics & Semiconductor

new_biaoQian Si Rectifier Diode

According to our (Global Info Research) latest study, the global Si Rectifier Diode market size was valued at USD 4091.2 million in 2023 and is forecast to a readjusted size of USD 5287.4 million by 2030 with a CAGR of 3.7% during review period.

USD3480.00

Add To Cart

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Global Rectifier Diode Module Market 2024 by Manufacturers, Regions, Type and Application, Forecast to 2030

date 12 Jan 2024

date Electronics & Semiconductor

new_biaoQian Rectifier Diode Module

According to our (Global Info Research) latest study, the global Rectifier Diode Module market size was valued at USD million in 2023 and is forecast to a readjusted size of USD million by 2030 with a CAGR of % during review period.

USD3480.00

Add To Cart

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Global Silicon Rectifier Diode Supply, Demand and Key Producers, 2024-2030

date 19 Feb 2024

date Electronics & Semiconductor

new_biaoQian Silicon Rectifier Diode

The global Silicon Rectifier Diode market size is expected to reach $ million by 2030, rising at a market growth of % CAGR during the forecast period (2024-2030).

USD4480.00

Add To Cart

Add To Cart

Global Silicon Rectifier Diode Market 2024 by Manufacturers, Regions, Type and Application, Forecast to 2030

date 17 Jan 2024

date Electronics & Semiconductor

new_biaoQian Silicon Rectifier Diode

According to our (Global Info Research) latest study, the global Silicon Rectifier Diode market size was valued at USD million in 2023 and is forecast to a readjusted size of USD million by 2030 with a CAGR of % during review period.

USD3480.00

Add To Cart

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Global General Rectifier Diode Market 2024 by Manufacturers, Regions, Type and Application, Forecast to 2030

date 08 Jan 2024

date Electronics & Semiconductor

new_biaoQian General Rectifier Diode

According to our (Global Info Research) latest study, the global General Rectifier Diode market size was valued at USD million in 2023 and is forecast to a readjusted size of USD million by 2030 with a CAGR of % during review period.

USD3480.00

Add To Cart

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Global Schottky Rectifier Diode Supply, Demand and Key Producers, 2024-2030

date 12 Oct 2024

date Electronics & Semiconductor

new_biaoQian Schottky Rectifier Diode

This report studies the Schottky Barrier Diodes (SBDs). A Schottky barrier diode (SBD) is a device in which a semiconductor and a metal such as molybdenum are bonded instead of a pn junction. In general, semiconductors in which metals are bonded to n-type layers have been commercialized. It is suitable for high-speed switching applications, because of small forward voltage and short reverse recovery time.

USD4480.00

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Global Schottky Rectifier Diode Market 2024 by Manufacturers, Regions, Type and Application, Forecast to 2030

date 12 Oct 2024

date Electronics & Semiconductor

new_biaoQian Schottky Rectifier Diode

This report studies the Schottky Barrier Diodes (SBDs). A Schottky barrier diode (SBD) is a device in which a semiconductor and a metal such as molybdenum are bonded instead of a pn junction. In general, semiconductors in which metals are bonded to n-type layers have been commercialized. It is suitable for high-speed switching applications, because of small forward voltage and short reverse recovery time.

USD3480.00

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industry 20 Feb 2024

industry Electronics & Semiconductor

new_biaoQian Rectifier Diode

The global Rectifier Diode market size is expected to reach $ 5080 million by 2030, rising at a market growth of 2.4% CAGR during the forecast period (2024-2030).

USD4480.00

addToCart

Add To Cart

industry 02 Jan 2024

industry Electronics & Semiconductor

new_biaoQian Rectifier Diode

According to our (Global Info Research) latest study, the global Rectifier Diode market size was valued at USD 4305.1 million in 2023 and is forecast to a readjusted size of USD 5080 million by 2030 with a CAGR of 2.4% during review period.

USD3480.00

addToCart

Add To Cart

industry 11 Feb 2024

industry Electronics & Semiconductor

new_biaoQian Si Rectifier Diode

The global Si Rectifier Diode market size is expected to reach $ 5287.4 million by 2030, rising at a market growth of 3.7% CAGR during the forecast period (2024-2030).

USD4480.00

addToCart

Add To Cart

industry 11 Jan 2024

industry Electronics & Semiconductor

new_biaoQian Si Rectifier Diode

According to our (Global Info Research) latest study, the global Si Rectifier Diode market size was valued at USD 4091.2 million in 2023 and is forecast to a readjusted size of USD 5287.4 million by 2030 with a CAGR of 3.7% during review period.

USD3480.00

addToCart

Add To Cart

industry 12 Jan 2024

industry Electronics & Semiconductor

new_biaoQian Rectifier Diode Module

According to our (Global Info Research) latest study, the global Rectifier Diode Module market size was valued at USD million in 2023 and is forecast to a readjusted size of USD million by 2030 with a CAGR of % during review period.

USD3480.00

addToCart

Add To Cart

industry 19 Feb 2024

industry Electronics & Semiconductor

new_biaoQian Silicon Rectifier Diode

The global Silicon Rectifier Diode market size is expected to reach $ million by 2030, rising at a market growth of % CAGR during the forecast period (2024-2030).

USD4480.00

addToCart

Add To Cart

industry 17 Jan 2024

industry Electronics & Semiconductor

new_biaoQian Silicon Rectifier Diode

According to our (Global Info Research) latest study, the global Silicon Rectifier Diode market size was valued at USD million in 2023 and is forecast to a readjusted size of USD million by 2030 with a CAGR of % during review period.

USD3480.00

addToCart

Add To Cart

industry 08 Jan 2024

industry Electronics & Semiconductor

new_biaoQian General Rectifier Diode

According to our (Global Info Research) latest study, the global General Rectifier Diode market size was valued at USD million in 2023 and is forecast to a readjusted size of USD million by 2030 with a CAGR of % during review period.

USD3480.00

addToCart

Add To Cart

industry 12 Oct 2024

industry Electronics & Semiconductor

new_biaoQian Schottky Rectifier Diode

This report studies the Schottky Barrier Diodes (SBDs). A Schottky barrier diode (SBD) is a device in which a semiconductor and a metal such as molybdenum are bonded instead of a pn junction. In general, semiconductors in which metals are bonded to n-type layers have been commercialized. It is suitable for high-speed switching applications, because of small forward voltage and short reverse recovery time.

USD4480.00

addToCart

Add To Cart

industry 12 Oct 2024

industry Electronics & Semiconductor

new_biaoQian Schottky Rectifier Diode

This report studies the Schottky Barrier Diodes (SBDs). A Schottky barrier diode (SBD) is a device in which a semiconductor and a metal such as molybdenum are bonded instead of a pn junction. In general, semiconductors in which metals are bonded to n-type layers have been commercialized. It is suitable for high-speed switching applications, because of small forward voltage and short reverse recovery time.

USD3480.00

addToCart

Add To Cart

Go To Page

Confirm